Halbleiterstruktur und herstellungsverfahren dafür

Semiconductor structure and fabrication method thereof

Structure à semi-conducteurs et son procédé de fabrication

Abstract

The present invention provides semiconductor structures and fabrication methods thereof. An exemplary fabrication method includes providing a semiconductor substrate; forming a plurality of fins on the semiconductor substrate, each fin having a first sidewall surface and an opposing second sidewall surface; performing an asymmetric oxidation process on the fins to oxidize the first sidewall surfaces of the fins to form a first oxide layer, and to oxidize the second sidewall surfaces of the fins to form a second oxide layer, a thickness of the first oxide layer being different from a thickness of the second oxide layer, and un-oxidized portions of the fins between the first oxide layer and the second oxide layer being configured as channel layers; removing the second oxide layer and a partial thickness of the first oxide layer; and forming a gate structure crossing over the channel layers over the semiconductor substrate.

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Patent Citations (5)

    Publication numberPublication dateAssigneeTitle
    US-2005110085-A1May 26, 2005Huilong Zhu, Jochen Beintner, Doris Bruce B., Ying ZhangDual gate finfet
    US-2005245009-A1November 03, 2005International Business Machines CorporationBackgated finfet having diferent oxide thicknesses
    US-2006091433-A1May 04, 2006Kazumi NishinoharaSemiconductor integrated circuit device and manufacturing method thereof
    US-2009032872-A1February 05, 2009Giles Martin D, Kencke David L, Cea Stephen MMultiple oxide thickness for a semiconductor device
    US-2015200276-A1July 16, 2015International Business Machines CorporationLocal thinning of semiconductor fins

NO-Patent Citations (1)

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