Method of forming a metal wiring in a semiconductor device

반도체 소자의 금속배선 형성 방법

Abstract

PURPOSE: A method for fabricating a metal interconnection of a semiconductor device is provided to prevent a fine pillar-type metal pattern, by making metal layers connected by a pillar-type metal pattern, by forming the metal pattern after a process for patterning a metal layer for forming a lower metal interconnection, by having the lower metal interconnection and the metal pad made of a metal layer, and by making the lower portion of the metal pattern broader than the upper portion. CONSTITUTION: An interlayer dielectric is formed on a semiconductor substrate(301) and patterned to form a contact hole so that a predetermined portion of the substrate is exposed. A metal layer and an anti-reflective coating(ARC) are sequentially formed on the interlayer dielectric to fill the contact hole. The ARC is patterned. The metal layer in the exposed portion is etched to form a lower metal interconnection. After a photoresist layer is formed, a predetermined photoresist layer pattern is formed on the ARC. The photoresist layer is patterned to make the photoresist layer left between the lower metal interconnections. After the ARC is patterned, the metal layer in the exposed portion is etched to form the metal pattern. After a spacer(306) is formed on the sidewall of the metal pattern and the lower metal interconnection, the metal layer in the exposed portion is etched. The second interlayer dielectric(313) is formed and planarized until the surface of the metal pattern is exposed. A metal interconnection is formed on the second interlayer dielectric.
본 발명은 반도체 소자의 다층 금속배선 형성 방법에 관한 것으로, 기둥 형태의 금속패턴에 의해 금속층 간의 접속이 이루어지도록 하되, 하부 금속배선 형성을 위한 금속층 패터닝 후 기둥 형태의 금속패턴이 형성되도록 하고, 하부 금속 배선과 기둥 형태의 금속패턴을 하나의 금속층으로 형성하며, 금속패턴의 하부를 상부보다 넓게 형성하여 쓰러짐이 발생되지 않도록 하며, 또한, 반사율이 낮으며 금속과의 식각 선택비가 큰 물질로 이루어진 반사방지막을 이용하여 사진 공정시 발생되는 난반사와 금속의 식각에 따른 금속패턴의 형태 불량이 방지되도록 한다.

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